Testing Of The Transistor Component Circuit At The Base(B) Terminal Serves As A Switch Against The Led Light
DOI:
https://doi.org/10.59261/jequi.v8i1.251Keywords:
Effective terminal base Transitor, transistor characteristics analysis, electronics practical learningAbstract
The rapid development of technology poses challenges in electronics education, particularly in students' ability to observe and test electronic components such as transistors. This study aims to systematically observe and measure transistor characteristics by identifying codes and numbers on the transistor body, determining voltage parameters, and analyzing LED lamp load conditions. The research employs an experimental approach with direct measurements using a multimeter and power supply coupled with circuit components. The BC 547 transistor base terminal functions as a switch, with voltage inputs ranging from 2 Vpp to 4 Vpp applied incrementally (2, 2.5, 3, 3.5, and 4 Vpp). In closed switch configuration, 2 Vpp produces 0 A current with lamp off, 2.5 Vpp yields 0 A with dim illumination, while 3-4 Vpp generates 0.02-0.12 A current with bright to very bright conditions. In open switch configuration, all voltage levels produce 0 A current with lamp remaining off, confirming transistor's dual function as amplifier and switch. This research contributes to basic electronics practical learning, provides measurement-based experimental procedures, and assists technicians in transistor identification within electronic circuits.
Downloads
References
Ali, S. H., Dusmez, S., & Akin, B. (2016). Investigation Of Collector Emitter Voltage Characteristics In Thermally Stressed Discrete Igbt Devices. 2016 Ieee Energy Conversion Congress And Exposition (Ecce), 1–6.
Baliga, B. J. (2015). The Igbt Device: Physics, Design And Applications Of The Insulated Gate Bipolar Transistor. William Andrew.
Chen, J., Zhang, W. J., Shorten, A., Yu, J., Sasaki, M., Kawashima, T., Nishio, H., & Ng, W. T. (2018). A Smart Igbt Gate Driver Ic With Temperature Compensated Collector Current Sensing. Ieee Transactions On Power Electronics, 34(5), 4613–4627.
Danković, D., Marjanović, M., Mitrović, N., Živanović, E., Danković, M., Prijić, A., & Prijić, Z. (2022). The Importance Of Students’ Practical Work In High Schools For Higher Education In Electronic Engineering. Ieee Transactions On Education, 66(2), 146–155.
Elgenedy, M. A., Massoud, A. M., Ahmed, S., Williams, B. W., & Mcdonald, J. R. (2019). A Modular Multilevel Voltage-Boosting Marx Pulse-Waveform Generator For Electroporation Applications. Ieee Transactions On Power Electronics, 34(11), 10575–10589.
Fatokun, J. O. (2018). College Of Humanities.
Gupta, K. M., & Gupta, N. (2015). Bipolar Junction Transistors. In Advanced Semiconducting Materials And Devices (Pp. 353–383). Springer.
Hu, Y.-L., Hua, Y., Pan, Z.-Q., Qian, J.-H., Yu, X.-Y., Bao, N., Huo, X.-L., Wu, Z.-Q., & Xia, X.-H. (2022). Pnp Nanofluidic Transistor With Actively Tunable Current Response And Ionic Signal Amplification. Nano Letters, 22(9), 3678–3684.
Jafari, H., & Habibi, M. (2019). High-Voltage Charging Power Supply Based On An Lcc-Type Resonant Converter Operating At Continuous Conduction Mode. Ieee Transactions On Power Electronics, 35(5), 5461–5478.
Jayakumar, K., & Balakrishnan, P. (2025). Electronics Components And Testing: Concepts, Methods, And Applications. Academic Guru Publishing House.
Maftunzada, S. A. L. (2024). Transistors: The Cornerstone Of Modern Electronics. Academic Research In Educational Sciences, 5(10), 92–98.
Muccini, M., & Toffanin, S. (2016). Organic Light-Emitting Transistors: Towards The Next Generation Display Technology. John Wiley & Sons.
Rahman, I., & Johari, M. (2022). Students’ Understanding And Skills On Voltage And Current Measurements Using Hands-On Laboratory And Simulation Software. Education And Information Technologies, 27(5), 6393–6406.
Rai, H., Singh, K. R. B., & Pandey, S. S. (2024). Transistor Based Electrochemical Devices: Fundamentals To Applications.
Sahoo, B. (2024). Analog Electronic Circuits.
Setekera, R. (2016). Compact Modeling Of Physical Mechanisms Present In The Weak Breakdown Regime Of Advanced Si And Sige Bipolar Transistors.
Siu, C. (2022). Electronic Devices, Circuits, And Applications. Springer.
Tigelaar, H. (2020). How Transistor Area Shrank By 1 Million Fold. Springer.
Tokatlidis, C., Tselegkaridis, S., Rapti, S., Sapounidis, T., & Papakostas, D. (2024). Hands-On And Virtual Laboratories In Electronic Circuits Learning—Knowledge And Skills Acquisition. Information, 15(11), 672.
Downloads
Published
Issue
Section
License
Copyright (c) 2026 Fransiskus Seda, Rochani Rochani, Otnial Anderias Mone, Diana Rachmawati
This work is licensed under a Creative Commons Attribution-ShareAlike 4.0 International License.
Authors who publish with this journal agree to the following terms:
- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution-ShareAlike 4.0 International (CC-BY-SA). that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work.
